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Results 1 to 25 of 234

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THE GROWTH AND ELECTRICAL CHARACTERISTICS OF EPITAXIAL LAYERS OF ZINC SULPHIDE AND OF ZINC SELENIDE ON P-TYPE GALLIUM PHOSPHIDESLEGER KJ; MILNES AG.1972; INTERNATION. J. ELECTRON.; G.B.; DA. 1972; VOL. 33; NO 5; PP. 565-581; BIBL. 1P.Serial Issue

INFLUENCE OF MICROSTRUCTURE ON CRACK PROPAGATION IN ZNSE.FREIMAN SW; MECHOLSKY JJ JR; RICE RW et al.1975; J. AMER. CERAM. SOC.; U.S.A.; DA. 1975; VOL. 58; NO 9-10; PP. 406-409; BIBL. 9 REF.Article

LUMINESCENCE IN HIGHLY CONDUCTIVE N-TYPE ZNSE.BOULEY JC; BLANCONNIER P; HERMAN A et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 8; PP. 3549-3555; BIBL. 17 REF.Article

R-N JUNCTION ZINC SULFO-SELENIDE AND ZINC SELENIDE LIGHT-EMITTING DIODES.ROBINSON RJ; KUN ZK.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 2; PP. 74-76; BIBL. 13 REF.Article

LATTICE DYNAMICS OF II-VI, III-V COMPOUNDSTALWAR DN; AGRAWAL BK.1972; SOLID STATE COMMUNIC.; G.B.; DA. 1972; VOL. 11; NO 12; PP. 1691-1694; ABS. FR.; BIBL. 7 REF.Serial Issue

ABSORPTION ELECTROOPTIQUE DU SELENIURE DE ZINC DOPE PAR LE MAGNESIUMGLUSHCHENKO NI; RVACHEV AL; SKIDAN EP et al.1976; UKRAIN. FIZ. ZH.; S.S.S.R.; DA. 1976; VOL. 21; NO 2; PP. 200-202; ABS. ANGL.; BIBL. 7 REF.Article

ELECTROREFLECTANE OF ZNSE IN THE VICINITY OF THE EO GAP.).KRAUSER J; THEIS D; GUMLICH HE et al.1975; PHYS. LETTERS, A; NETHERL.; DA. 1975; VOL. 51; NO 2; PP. 119-120; BIBL. 11 REF.Article

YELLOW-LIGHT-EMITTING ZNSE DIODEPARK YS; GEESNER CR; SHIN BK et al.1972; APPL. PHYS. LETTERS; U.S.A.; DA. 1972; VOL. 21; NO 12; PP. 567-569; BIBL. 8 REF.Serial Issue

OPTICAL ABSORPTION EDGE IN DOPED AND UNDOPED ZNSE CRYSTALSBAILLOU J; DAUNAY J; BUGNET P et al.DAUNAY J; 1980; J. PHYS. CHEM. SOLIDS; ISSN 0022-3697; USA; DA. 1980; VOL. 41; NO 3; PP. 295-300; BIBL. 9 REF.Article

DELAYED FAILURE IN CHEMICALLY VAPOR DEPOSITED ZNSEMCKINNEY KR; MECHOLSKY JJ; FREIMAN SW et al.1979; J. AM. CERAM. SOC.; ISSN 0002-7820; USA; DA. 1979; VOL. 62; NO 7-8; PP. 336-340; BIBL. 7 REF.Article

STROMUMSCHALTMECHANISMUS IN INHOMOGENEN ZINKSELENIDKRISTALLEN = MECANISMES D'INVERSION DU COURANT DANS DES CRISTAUX INHOMOGENES DE ZNSESERDYUK VV; CHEBANENKO AP; CHEMERESYUK GG et al.1978; PHYS. STATUS SOLIDI, A; DDR; DA. 1978; VOL. 50; NO 2; PP. 717-722; ABS. RUS; BIBL. 13 REF.Article

DISPERSION OF PHOTOELASTIC COEFFICIENTS IN ZNSE.TADA K; KIKUCHI K; SATO K et al.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; NO 5; PP. 757-760; BIBL. 14 REF.Article

LOW TEMPERATURE PHOTOLUMINESCENCE IN AG-DOPED ZNSE.SWAMINATHAN V; GREENE LC.1976; J. LUMINESC.; NETHERL.; DA. 1976; VOL. 14; NO 5-6; PP. 357-363; BIBL. 18 REF.Article

AGEING IN ZNSE: MN LIGHT EMITTING DIODES.WILSON JIB; ALLEN JW.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 6; PP. 433-436; BIBL. 5 REF.Article

ENERGY BAND STRUCTURE OF SOME WURTZITE CRYSTALS.CHATTERJEE S; SINHA P.1975; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1975; VOL. 70; NO 1; PP. 283-290; ABS. ALLEM.; BIBL. 16 REF.Article

EXCITON FINE STRUCTURE VIA ENVELOPE-HOLE COUPLING IN CUBIC ZNSE.SONDERGELD M; STAFFORD RG.1975; PHYS. REV. LETTERS; U.S.A.; DA. 1975; VOL. 35; NO 22; PP. 1529-1531; BIBL. 13 REF.Article

ADAPTER FUER DAS RASTER-ELEKTRONENMIKROSKOP ZUR SPEKTRALEN MESSUNG DER KATODOLUMINESZENG. = ADAPTEUR POUR LE MICROSCOPE ELECTRONIQUE A BALAYAGE POUR LA MESURE SPECTRALE DE LA CATHODOLUMINESCENCEMENNIGER H; ZSCHEILLE H; RAIDT H et al.1975; EXPER. TECH. PHYS.; DTSCH.; DA. 1975; VOL. 23; NO 1; PP. 91-95; ABS. ANGL.; BIBL. 6 REF.Article

ON THE QUESTION OF EXCITON-PHONON COMPLEXES IN II-VI COMPOUNDS.GEORGOBIOANI AN; OZEROV YU V; FRIEDRICH H et al.1975; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1975; VOL. 68; NO 2; PP. 663-666; ABS. RUSSE; BIBL. 11 REF.Article

MODULATION U.H.F. DE LA LUMIERE DANS UN CRISTAL DE SELENIURE DE ZINCADRIANOVA II; NESTEROVA ZV; POPOV YU V et al.1974; IN: OPT. EHLEKTROOPT. OBRAB. INF. 3. VSES. SEMIN.; MOSKVA; 1971; MOSKVA; NAUKA; DA. 1974; PP. 114-116; BIBL. 3 REF.Conference Paper

ELECTROLUMINESCENCE PAR INJECTION DANS L'HETEROJONCTION ZNSE-SNO2IKEDA K; USHIDA K; KHAMAKAVA E et al.1973; IZVEST. AKAD. NAUK S.S.S.R., SER. FIZ.; S.S.S.R.; DA. 1973; VOL. 37; NO 2; PP. 423-425; BIBL. 6 REF.Serial Issue

DIELECTRIC CONSTANT AND ITS TEMPERATURE DEPENDENCE FOR GAAS, CDTE, AND ZNSE.STRZALKOWSKI I; JOSHI S; CROWELL CR et al.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 28; NO 6; PP. 350-352; BIBL. 19 REF.Article

STRAIN-MODULATED ELECTRON SPIN RESONANCE SPECTRA OF 3D5 IONS IN ZNSE.HENNING JCM; DEN BOEF JH.1975; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1975; VOL. 69; NO 1; PP. 153-161; ABS. ALLEM.; BIBL. 16 REF.Article

INFLUENCE D'UN ECLAIREMENT PAR IMPULSIONS SUR LA DEFORMATION PLASTIQUE DES COMPOSES SEMICONDUCTEURS AIIBVIERMAKOV GA; KOROVKIN EV; OSIPIYAN YU A et al.1975; FIZ. TVERD. TELA; S.S.S.R.; DA. 1975; VOL. 17; NO 8; PP. 2364-2367; BIBL. 2 REF.Article

THE ELECTRONIC STRUCTURE OF ZNSE IN TWO PHASESBRUST D.1973; SOLID STATE COMMUNIC.; G.B.; DA. 1973; VOL. 12; NO 2; PP. 125-127; ABS. FR.; BIBL. 13 REF.Serial Issue

PHOTOLUMINESCENCE IN ZNSE GROWN BY LIQUID-PHASE EPITAXY FROM ZN-GA SOLUTIONFUJITA S; MIMOTO H; NOGUCHI T et al.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 2; PP. 1079-1087; BIBL. 24 REF.Article

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